NUKLEONIKA 2006, 51(2):105-109

SURFACE STRUCTURE CHANGES OF InP AND GaAs SINGLE CRYSTALS IRRADIATED WITH HIGH ENERGY ELECTRONS AND SWIFT HEAVY IONS

Alexander Yu. Didyk1, Fadej F. Komarov2, Ludmila A. Vlasukova2, Vera N. Yuvchenko2, Andrzej Hofman1,3

1 Joint Institute for Nuclear Research, FLNR, 6 Joliot-Curie Str., 141980 Dubna, Moscow Region, Russia
2 Belarussian State University, 4 F. Skorina Ave., 220050, Minsk, Belarus
3 Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions have been studied by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation has shown to lead to macrodefect formation in the form of cracks and breaks, at the depths near the ion end-of-range, and on the crystal surface. A possible explanation of the observed effects is proposed.