Stanisław Warchoł1, Henryk Rzewuski1, Janusz Krynicki1, Rainer Groetzschel2
1Institute of Nuclear Chemistry and Technology, 16 Dorodna Str., 03-195 Warsaw, Poland,
2Forschungszentrum Rossendorf e.V., Postfach 510119 (40/2) 01314 Dresden, Germany
The angular dependence of post-implantation defects removal in GaAs irradiated with 1 MeV electrons from a Van de Graaff accelerator has been investigated. The possible way of enhancing defect annealing consists in ionization created by electron irradiation. In this paper new results of a damage level behaviour dependent on 1 MeV electron beam angle irradiation are presented. GaAs single crystals of <100> orientation were implanted with 150 keV As+ ions at RT and then irradiated with a scanning beam of 1 MeV electrons at some selected angles. Rutheford Backscattering Spectroscopy (RBS) of 1.7 MeV 4H+ ions were used to determine the depth distribution of defect concentration before and after electron irradiation. The results relate clearly the ionization intensity created by the electron beam with angle of incidence with respect to the GaAs <100> orientation.