F. F. Komarov, A. S. Kamyshan, A. M. Mironov
Institute of Applied Physics Problems, 7 Kurchatova Str., 220064 Minsk, Belorussia
The processes of buried insulating layers formation in silicon with substoichiometric implantation of nitrogen ions and device insulation in III-V semiconductors are described in this paper. The device insulation in III-V semiconductors can be achieved as the result of modification of crystal properties around of the device structures by polyenergetic or high-energy ion implantation.