M. Kulik1, S. O. Saied2, J. Likiewicz1, D. M¹czka1
1 Institute of Physics, Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland,
2 Electronic Engineering and Applied Physics Dept, Aston University, Birmingham, England
The chemical composition of an oxide on the GaAs surface implanted with Xe and Ar ions at various doses was studied by x-ray-photoelectron spectroscopy (XPS). It was found that only the dose of the introduced admixtures, and thereby the number of occurring defects can influence the kind of oxide covering surface. From the ellipsometric measurements it was found that the layer thickness of the oxide on the GaAs surface increases monotonically with the increasing dose implanted and reaches a certain saturation level for the samples exposed to ions at an amorphizing dose.