A. Turos1, A. Stonert1, B. Breeger2, E. Wendler2, W. Wesch2
1 Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland and Andrzej Soltan Institute for Nuclear Research, 69 Hoza Str., 00-681 Warsaw, Poland,
2 Friedrich Schiller University, Institute of Solid State Physics, Max-Wien-Platz 1, D-07743 Jena, Germany
Defect properties are usually studied by the analysis of their thermally activated transformations. In this paper the results of the first RBS/channeling study of the simple defect behavior in the GaAs single crystals and AlxGa1-xAs epitaxial layers irradiated at 77 K and annealed at temperatures ranging from 77 to 650 K are presented. Two important recovery stages at 280 and 450 K were revealed. They were attributed to the defect mobility in the Ga- and As-sublattice, respectively. The structure of defects and their properties are discussed and the comparison with findings obtained using other analytical techniques is made.