MICROSCOPIC MODEL OF PHENOMENA AT SiOx/Si BOUNDARY IN STRAINED Cz-Si SINGLE CRYSTALS

A Misiuk1, J. Wolf2, L. Datsenko1, J. Adamczewska1, J. B¹k-Misiuk4

1 Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,
2 Friedrich-Schiller-Universitaet, Max-Wien Platz 1, Jena, Germany,
3 Institute of Semiconductor Physics, Prosp. Nauki 45, Kiev, Ukraine,
4 Institute of Physics, Al. Lotników 32/46, 02-668 Warszawa, Poland


Strain related effects at SiOx/Si boundary in Czochralski grown silicon have been investigated by subjecting the samples to hydrostatic pressures up to 2.5 GPa at temperatures up to 1550 K. Samples have been examined by X-ray and infrared methods.
Observed effects are caused by severall phenomena. For the samples pressurized up to 1.3 GPa at room temperature, there is an evidence of primary defect annihilation, whereas for that subjected to higher pressures, also of additional defect creation. The effect of short-time high pressure - high temperature treatment (5 minutes) can be explained in the similar way whereas after prolonged pressurization, the other phenomena related to enhanced diffusion, dominate.