INFLUENCE OF THE POINT DEFECTS ON THERMAL EXPANSION OF SEMICONDUCTORS

J. Bak-Misiuk1, W. Paszkowicz1, A. Misiuk2

1 Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland,
2 Institute of Electron Technology, Al. Lotników 32, Warsaw, Poland

Various factors can affect the temperature dependence of the lattice constant of semiconducting materials. The influence of nonstoichiometry in GaP and GaAs and of high-pressure-created defects in Si and GaP on the coefficient of thermal expansion is investigated and discussed.