L. Nowicki1, S. Kwiatkowski1, A. Turos1, J. Auleytner2,
J. Majewski2, I. A. Vartanjantz3, M. V. Kovalchuk3, A. N. Sosphenov3
1 Soltan Institute of Nuclear Studies, Hoża 69, 00-681 Warsaw, Poland
2 Institute of Physics, Polish Academy of Sciences, Al. Lotników 32, Warsaw, Poland,
3 Institute of Crystallography, Russian Academy of Science, 117333, Moscow, Russia
Silicon single crystals were implanted with 80 keV and Ni ions doses of 5·1015 ions/cm2.
To determine the degree of crystal damage and lattice localization of implanted metal atoms the Rutherford
backscattering method was applied in channeling geometry (RBS-c). The experimental results were compared
with outcomes of X-ray standing wave method (XSW) applied to the same samples.
Both experiments gave the consistent results according to the tractability of Si on the amorphisation
process. Moreover, using both methods, some substitutional fraction of implanted atoms were noticed.
The depth profiles of implanted atoms were compared with results of computer simulation. Complementary
of XSW and RBS-channeling techniques for studies of radiation damage and lattice location of implanted
atoms is discussed.