J. Krynicki1, J. Oleniak2, G. Iwosa2
1 Institute of Nuclear Chemistry and Technology, 03-195 Warsaw, ul. Dorodna 16, Poland,
2 Dept. of Chemical and Process Engin., Warsaw Technical University, Warsaw, Poland
The conditions of implantations to obtain a uniform profile of the implanted ions into GaAs have been
calculated. A special computer program has been elaborated.
The results of the calculation show the possibility of obtaining flat (with accuracy better than 5%)
implanted ion distributions in a wide depth range. The energy-dose data are presented for various
atoms implanted into GaAs. The validity of the obtained results is limited only by the availability
of realistic data of Rp and DRp for high energy ion implantation.