Electron beam modification of minority carrier lifetime offers an alternative solution to traditional technique of high temperature gold or platinum diffusion into semiconductor crystals. Not only has the electron beam (EB) technology helped to solve the common diffusion problems, like the non-uniform dopant distribution and higher leakage currents.
The major advantages of high energy electrons come from their ability to penetrate deep into the matter. The uniform distribution of recombination centres is created, and radioactivity level comes back to the normal background level immediately after the electron beam has been switched off. Thus, the device switching time can be tailored up to the user's needs even in finished or encapsulated power devices.
EB processed fast switching power thyristors, triacs and diodes are founding the growing number of applications, for which the long-term stability and efficiency of energy saving semiconductor components is important and must be guaranteed at competitive prices. The uninterruptible power supplies for data processing centres and hospital reanimation equipment are typical examples, followed by many other applications in metallurgy, mining, transport, household appliances, and other areas.
EB technology does not involve increased investing, except the money spent for the electron beam itself, which can be quickly recovered due to the major improvement and simplification of the device manufacturing process.

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